| 1 |
The model of performance change of GaInP/GaAs/Ge triple junction solar cells in pico-satellite
Xu WT, Cheng ZM, Xu XH
Solar Energy, 169, 105, 2018 |
| 2 |
Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells
Yang WX, Dai P, Ji L, Tan M, Wu YY, Uchida S, Lu SL, Yang H
Applied Surface Science, 389, 673, 2016 |
| 3 |
Degradation model of the orbiting current for GaInP/GaAs/Ge triple-junction solar cells used on satellite
Meng JR, Feng J, Sun Q, Pan ZQ, Liu TY
Solar Energy, 122, 464, 2015 |
| 4 |
Light-splitting photovoltaic system utilizing two dual-junction solar cells
Xiong KL, Lu SL, Dong JR, Zhou TF, Jiang DS, Wang RX, Yang H
Solar Energy, 84(12), 1975, 2010 |
| 5 |
Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD
Asaoka N, Funato H, Suhara M, Okumura T
Applied Surface Science, 216(1-4), 413, 2003 |
| 6 |
Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
Fujiwara Y, Nonogaki Y, Oga R, Koizumi A, Takeda Y
Applied Surface Science, 216(1-4), 564, 2003 |
| 7 |
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
Wernersson LE, Gustafson B, Gustafsson A, Borgstrom M, Pietzonka I, Sass T, Seifert W, Samuelson L
Applied Surface Science, 190(1-4), 252, 2002 |
| 8 |
GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors
Moto A, Tanaka S, Tanabe T, Takagishi S
Solar Energy Materials and Solar Cells, 66(1-4), 585, 2001 |
| 9 |
Interfacial roughening in lattice-matched GaInP/GaAs heterostructures
Wang YQ, Wang ZL, Brown T, Brown A, May G
Thin Solid Films, 397(1-2), 162, 2001 |
| 10 |
Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
Lin YS, Shieh HM, Hsu WC, Su JS, Huang JZ, Wu YH, Ho SD, Lin W
Journal of Vacuum Science & Technology B, 16(3), 958, 1998 |
