| 1 |
Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors
Lee E, Ko J, Lim KH, Kim K, Park SY, Myoung JM, Kim YS
Advanced Functional Materials, 24(29), 4689, 2014 |
| 2 |
Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic
Hong K, Kim SH, Lee KH, Frisbie CD
Advanced Materials, 25(25), 3413, 2013 |
| 3 |
A new approach to the surface modification of polymeric gate insulators for organic thin-film transistor applications
Ahn T, Choi Y, Yi MH
Applied Surface Science, 255(5), 2185, 2008 |
| 4 |
The Effect of Temperature on Electron-Capture Cross-Sections and Densities in Irradiated (2.4 Mrads(SiO2)) Igfets
Kim HS, Reisman A, Williams CK, Brush H
Journal of the Electrochemical Society, 142(6), 2007, 1995 |
| 5 |
Electrical and Optical-Properties of Phosphorus Nitride Films Formed on InP Substrates with Photon-Assisted Chemical-Vapor-Deposition
Matsumoto Y, Hanajiri T, Sugano T, Tuyen LT, Katoda T
Thin Solid Films, 269(1-2), 41, 1995 |
| 6 |
Plasma-Enhanced Chemical-Vapor-Deposition of Boron-Nitride Onto InP
Bath A, Baehr O, Barrada M, Lepley B, Vanderput PJ, Schoonman J
Thin Solid Films, 241(1-2), 278, 1994 |
