화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Si-Ge alloys in C2/c phase with tunable direct band gaps: A comprehensive study
Fan QY, Wang HQ, Zhang WZ, Wei MF, Song YX, Zhang W, Yun SN
Current Applied Physics, 19(12), 1325, 2019
2 Forbidden energy band gap in diluted a-Ge1-xSix:N films
Guarneros C, Rebollo-Plata B, Lozada-Morales R, Espinosa-Rosales JE, Portillo-Moreno J, Zelaya-Angel O
Thin Solid Films, 520(16), 5463, 2012
3 Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer
Wu WW, Wang CW, Chen KN, Cheng SL, Lee SW
Thin Solid Films, 518(24), 7279, 2010
4 SiGeHMOSFET monolithic inverting current mirror
Michelakis K, Despotopoulos S, Papavassiliou C, Vilches A, Fobelets K, Toumazou C
Solid-State Electronics, 49(4), 591, 2005
5 Further evidence on the observation of compositional fluctuation in silicon-germanium alloy nanocrystals prepared in anodized porous silicon-germanium films
Kartopu G, Ekinci Y
Thin Solid Films, 473(2), 213, 2005
6 SiGe virtual substrate HMOS transistor for analogue applications
Michelakis K, Despotopoulos S, Gaspari V, Vilches A, Fobelets K, Papavassiliou C, Toumazou C, Zhang J
Applied Surface Science, 224(1-4), 386, 2004
7 Clustering and precipitation in Al-Si-Ge and Al-Si-Ge-Cu alloys
Radmilovic V, Dahmen U, Dracup B, Miller MK, Mitlin D, Morris JW
Materials Science Forum, 396-4, 905, 2002
8 The electrical characteristics of silicon carbide alloyed with germanium
Katulka G, Roe K, Kolodzey J, Eldridge G, Clarke RC, Swann CP, Wilson RG
Applied Surface Science, 175, 505, 2001
9 Si/Si1-xGex photodetectors using three-dimensional growth modes to enhance photoresponse at lambda=1550 nm
Janz S, Baribeau JM, Lockwood DJ, McCaffrey JP, Moisa S, Rowell NL, Xu DX, Lafontaine H, Pearson MRT
Journal of Vacuum Science & Technology A, 18(2), 588, 2000
10 Effect of Strain on Light-Emission from Pseudomorphic Si/Si1-xGex/Si Structures
Kimura Y, Nakagawa K, Miyao M
Thin Solid Films, 306(1), 130, 1997