화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Raman-Spectra as a Measure of Interface Alloying for IV/IV Superlattices
Zi JA, Zhang KM, Xie XD
Journal of Vacuum Science & Technology B, 15(4), 1105, 1997
2 Interfaces of Strained-Layer (Gensim)(P) Superlattices Studied by 2nd-Harmonic Generation
Xiao XD, Zhang C, Fedotov AB, Chen ZH, Loy MM
Journal of Vacuum Science & Technology B, 15(4), 1112, 1997
3 Novel Microscopic Properties and the Electronic-Structure of SiGe Heterostructures and Related Systems
Shaw MJ, Briddon PR, Jaros M
Thin Solid Films, 294(1-2), 166, 1997
4 The Dielectric Function of Some Low-Dimensional Si and Ge Structures
Polatoglou HM, Vlachoudis V
Thin Solid Films, 276(1-2), 276, 1996
5 Interface Structure of Ge/Si(111) During Solid-Phase Epitaxy Studied by Medium-Energy Ion-Scattering
Sumitomo K, Nishioka T, Shimizu N, Shinoda Y, Ogino T
Journal of Vacuum Science & Technology A, 13(2), 289, 1995
6 Ge/Si Heterostructures Grown by Sn-Surfactant-Mediated Molecular-Beam Epitaxy
Lin XW, Lilientalweber Z, Washburn J, Weber ER, Sasaki A, Wakahara A, Hasegawa T
Journal of Vacuum Science & Technology B, 13(4), 1805, 1995
7 Modification of Al/GaAs(001) Schottky Barriers by Means of Heterovalent Interface Layers
Cantile M, Sorba L, Faraci P, Yildirim S, Biasiol G, Bratina G, Franciosi A, Miller TJ, Nathan MI, Tapfer L
Journal of Vacuum Science & Technology B, 12(4), 2653, 1994