검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
InGaAsBi materials grown by gas source molecular beam epitaxy Ai LK, Zhou SX, Qi M, Xu AH, Wang SM Journal of Crystal Growth, 477, 135, 2017 |
| 2 |
InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy Teng T, Xu AH, Ai LK, Sun H, Qi M Journal of Crystal Growth, 378, 618, 2013 |
| 3 |
Gas source MBE grown Al0.52In0.48P photovoltaic detector Li C, Zhang YG, Gu Y, Wang K, Li AZ, Li H, Shan XM, Fang JX Journal of Crystal Growth, 323(1), 501, 2011 |
| 4 |
InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy Teng T, Ai LK, Xu AH, Sun H, Zhu FY, Qi M Journal of Crystal Growth, 323(1), 525, 2011 |
| 5 |
In As/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy Yang HD, Gong Q, Li SG, Cao CF, Xu CF, Chen P, Feng SL Journal of Crystal Growth, 312(23), 3451, 2010 |
| 6 |
"Temperature oscillation'' as a real-time monitoring of the growth of 3C-SiC on Si substrate Saito E, Konno A, Ito T, Yasui K, Nakazawa H, Endoh T, Narita Y, Suemitsu M Applied Surface Science, 254(19), 6235, 2008 |
| 7 |
A high-power AlGaN/GaN heterojunction field-effect transistor Yoshida S, Ishii H, Li J, Wang DL, Ichikawa M Solid-State Electronics, 47(3), 589, 2003 |
| 8 |
Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy Tsukidate Y, Suemitsu M Applied Surface Science, 175, 43, 2001 |
| 9 |
Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates Wallart X, Mollot F Applied Surface Science, 166(1-4), 446, 2000 |
| 10 |
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy Liu JP, Huang DD, Li JP, Lin YX, Sun DZ, Kong MY Journal of Crystal Growth, 208(1-4), 322, 2000 |