| 1 |
Theoretical study on the optoelectronic properties of GaAs nanostructures with Al component gradient change
Sun Y, Liu L, Lv ZS, Zhangyang XY, Lu FF, Tian J
International Journal of Energy Research, 45(5), 7270, 2021 |
| 2 |
Investigation of the incident light intensity effect on the internal electric fields of GaAs single junction solar cell using bright electroreflectance spectroscopy
SaeidNahaie S, Entezar SR, Naghshara H, Jo HJ, Kim JS, Kim Y, Lee SJ
Current Applied Physics, 20(1), 145, 2020 |
| 3 |
Electrical spin transport in a GaAs (110) channel
Kim H, Park HG, Min BC, Han SH, Chang J, Kim HJ, Koo HC
Current Applied Physics, 20(11), 1295, 2020 |
| 4 |
Highly effective III-V solar cells by controlling the surface roughnesses
Hwang ST, Gil B, Yun AJ, Kim J, Kim J, Woo H, Park K, Park B
Current Applied Physics, 20(7), 899, 2020 |
| 5 |
Controlled high-quality interface of a Ti2.5O3(010)/GaAs(001) heterostructure enabled by minimized lattice mismatch and suppressed ion diffusion
Zhou YX, Liu XP, Zhu J
Journal of Colloid and Interface Science, 560, 769, 2020 |
| 6 |
Impact of gas adsorption on the stability and electronic properties of negative electron affinity GaAs nanowire photocathodes
Liu L, Diao Y, Xia SH
Journal of Colloid and Interface Science, 572, 297, 2020 |
| 7 |
Numerical optimisation and recombination effects on the vertical-tunnel-junction (VTJ) GaAs solar cell up to 10,000 suns
Outes C, Fernandez EF, Seoane N, Almonacid F, Garcia-Loureiro AJ
Solar Energy, 203, 136, 2020 |
| 8 |
Surface and interface properties of ZrO2/GaAs, SiO2/GaAs and GaP/GaAs hetero structures investigated by surface photovoltage spectroscopy
Roychowdhury R, Dixit VK, Vashisht G, Sharma TK, Mukherjee C, Rai SK, Kumar S
Applied Surface Science, 476, 615, 2019 |
| 9 |
Surface passivation of GaAs (001) by Hg2Cl2 nanoplates combined with hexadecanethiol
Huang XH, Xia P, Wang X, Hu YJ
Applied Surface Science, 473, 141, 2019 |
| 10 |
Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding
Yamajo S, Yoon S, Liang J, Sodabanlu H, Watanabe K, Sugiyama M, Yasui A, Ikenaga E, Shigekawa N
Applied Surface Science, 473, 627, 2019 |
