검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Photoluminescence and secondary ion mass spectroscopy characterization of GaAs-AlGaAs quantum wells grown on GaAs (100) substrates with different surface treatments Guillen-Cervantes A, Rivera-Alvarez Z, Lopez-Lopez M, Koudriavtsev I, Sanchez-Resendiz VM Applied Surface Science, 255(9), 4742, 2009 |
| 2 |
Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on (n 1 1)A GaAs substrates Kitada T, Shimomura S, Hiyamizu S Journal of Crystal Growth, 301, 172, 2007 |
| 3 |
Hot-mesh CVD for growth of GaN films on (100) GaAs Yasui K, Ishibashi M, Taima Y, Akahane T Thin Solid Films, 464-65, 116, 2004 |
| 4 |
Characterization of oxide layers on GaAs substrates Allwood DA, Carline RT, Mason NJ, Pickering C, Tanner BK, Walker PJ Thin Solid Films, 364(1-2), 33, 2000 |
| 5 |
Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates Derbali MB, Meddeb J, Abraham P Thin Solid Films, 364(1-2), 192, 2000 |