| 1 |
Si doping mechanism in Si doped GaAsN
Tsukasaki T, Hiyoshi R, Fujita M, Makimoto T
Journal of Crystal Growth, 514, 45, 2019 |
| 2 |
Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As-2, H-2 and N-2
Valencia H, Kangawa Y, Kakimoto K
Journal of Crystal Growth, 468, 557, 2017 |
| 3 |
Ab initio study of GaAs(100) surface stability over AS(2), H-2 and N-2 as a model for vapor-phase epitaxy of GaAs1-xNx
Valencia H, Kangawa Y, Kakimoto K
Journal of Crystal Growth, 432, 6, 2015 |
| 4 |
Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept
Linares PG, Lopez E, Ramiro I, Datas A, Antolin E, Shoji Y, Sogabe T, Okada Y, Marti A, Luque A
Solar Energy Materials and Solar Cells, 132, 178, 2015 |
| 5 |
Optical characterization and carriers transfer between localized and delocalized states in Si-doped GaAsN/GaAs epilayer
Hassen F, Zaaboub Z, Bouhlel M, Naffouti M, Maaref H, Garni NM
Thin Solid Films, 594, 168, 2015 |
| 6 |
Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy
Bouzazi B, Kojima N, Ohshita Y, Yamaguchi M
Current Applied Physics, 13(7), 1269, 2013 |
| 7 |
Effects of gas-flow sequences on the self-limiting mechanisms of GaAsN films grown by atomic layer epitaxy
Suzuki H, Sadato H, Haraguchi T, Yamauchi T, Ozeki M, Ikari T
Thin Solid Films, 540, 79, 2013 |
| 8 |
Thermodynamic analysis of vapor-phase epitaxial growth of GaAsN on Ge
Kawano J, Kangawa Y, Ito T, Kakimoto K, Koukitu A
Journal of Crystal Growth, 343(1), 105, 2012 |
| 9 |
Formation of GaAs1-xNx nanofilm on GaAs by low energy N-2(+) implantation
Mikoushkin VM
Applied Surface Science, 257(11), 4941, 2011 |
| 10 |
A recombination center in p-type GaAsN grown by chemical beam epitaxy
Bouzazi B, Suzuki H, Kojima N, Ohshita Y, Yamaguchi M
Solar Energy Materials and Solar Cells, 95(1), 281, 2011 |
