검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Annealing studies of AN capped, MOCVD grown GaN films Derenge MA, Kirchner KW, Jones KA, Suvarna P, Shahedipour-Sandvik S Solid-State Electronics, 101, 23, 2014 |
| 2 |
The growth of GaN films by alternate source gas supply hot-mesh CVD method Komae Y, Saitou T, Suemitsu M, Ito T, Endoh T, Nakazawa H, Narita Y, Takata M, Akahane T, Yasui K Thin Solid Films, 517(12), 3528, 2009 |
| 3 |
Influence of AIN buffer layer thickness and deposition methods on GaN epitaxial growth Yang JH, Kang SM, Dinh DV, Yoon DH Thin Solid Films, 517(17), 5057, 2009 |
| 4 |
Barrier height control for electron field emission by growing an ultra-thin AIN layer on GaN/Mo Nishida S, Yamashita T, Hasegawa S, Asahi H Thin Solid Films, 464-65, 128, 2004 |
| 5 |
Optical and electrical properties of GaN/AlN superlattices grown on Si(111) substrate by pulsed laser deposition Tong XL, Zheng QG, Qin YX, Yu BH, Xi ZJ, Ding ZH Applied Surface Science, 217(1-4), 28, 2003 |