검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer Lin JH, Huang SJ, Su YK, Huang KW Applied Surface Science, 354, 168, 2015 |
| 2 |
Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer Hwang J, Lee K, Kim JS, Lee CR, Lee IH, Lee K, Lee JH, Leem JY, Kim JS, Ryou JH, Dupuis RD Journal of Crystal Growth, 370, 109, 2013 |
| 3 |
The enhancement of the deflection effect in InGaN/GaN light-emitting diodes with an ellipsoidal air tunnel Kim HK, Ryu JH, Kim HY, Kang JH, Han N, Park YJ, Ryu BD, Ko KB, Baek YS, Lysak VV, Hong CH, Kim HG Solid-State Electronics, 69, 14, 2012 |
| 4 |
Formation and optimization of undercut-microholes in InGaN light emitting diodes by using wet chemical etching Kim HK, Ryu JH, Kim HY, Kang JH, Han N, Park YJ, Ryu BD, Hong CH, Kim HG Thin Solid Films, 520(13), 4373, 2012 |
| 5 |
Transparent Phosphorus Doped ZnO Ohmic Contact to GaN Based LED Lim JH, Park SJ Korean Journal of Materials Research, 19(8), 417, 2009 |
| 6 |
Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor Chuang RW, Tsai PC, Su YX, Chu CH Solid-State Electronics, 52(7), 1043, 2008 |
| 7 |
Sapphire substrate-transferred nitride-based light-emitting diode fabricated by sapphire wet etching technique Choi YS, Kim SJ Solid-State Electronics, 50(9-10), 1522, 2006 |
| 8 |
Nitride-based LEDs fabricated on patterned sapphire substrates Chang SJ, Lin YC, Su YK, Chang CS, Wen TC, Shei SC, Ke JC, Kuo CW, Chen SC, Liu CH Solid-State Electronics, 47(9), 1539, 2003 |
| 9 |
The effect of p-GaN : Mg layers on the turn-on voltage of p-n junction LED Lee CR, Seol KW, Yeon JM, Choi DK, Ahn HK Journal of Crystal Growth, 222(3), 459, 2001 |
| 10 |
Uniformity control of group-III nitrides grown on 5 x 3 inch Al2O3 substrates in Planetary Reactors((R)) Protzmann H, Luenenbuerger M, Bremser M, Heuken M, Juergensen H Journal of Crystal Growth, 221, 629, 2000 |