검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Long range, non-destructive characterization of GaN substrates for power devices Gallagher JC, Anderson TJ, Luna LE, Koehler AD, Hite JK, Mahadik NA, Hobart KD, Kub FJ Journal of Crystal Growth, 506, 178, 2019 |
| 2 |
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices Anderson TJ, Gallagher JC, Luna LE, Koehler AD, Jacobs AG, Xie J, Beam E, Hobart KD, Feigelson BN Journal of Crystal Growth, 499, 35, 2018 |
| 3 |
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD Hite JK, Anderson TJ, Luna LE, Gallagher JC, Mastro MA, Freitas JA, Eddy CR Journal of Crystal Growth, 498, 352, 2018 |