검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Versatile protein-based bifunctional nano-systems (encapsulation and directed assembly): Selective nanoscale positioning of gold nanoparticle-viral protein hybrids Zheng B, Zettsu N, Fukuta M, Uenuma M, Hashimoto T, Gamo K, Uraoka Y, Yamashita I, Watanabe H Chemical Physics Letters, 506(1-3), 76, 2011 |
| 2 |
Removal of phenolic endocrine disruptors by Portulaca oleracea Imai S, Shiraishi A, Gamo K, Watanabe I, Okuhata H, Miyasaka H, Ikeda K, Bamba T, Hirata K Journal of Bioscience and Bioengineering, 103(5), 420, 2007 |
| 3 |
Direct fabrication of nano-gap electrodes by focused ion beam etching Nagase T, Gamo K, Kubota T, Mashiko S Thin Solid Films, 499(1-2), 279, 2006 |
| 4 |
Novel electron-beam molecular resists with high resolution and high sensitivity for nanometer lithography Kadota T, Kageyama H, Wakaya F, Gamo K, Shirota Y Chemistry Letters, 33(6), 706, 2004 |
| 5 |
Formation of GaN films by Ga ion direct deposition under nitrogen radical atmosphere Toda M, Yanagisawa J, Gamo K, Akasaka Y Journal of Vacuum Science & Technology B, 22(6), 3012, 2004 |
| 6 |
Fabrication of spin-current-induced domain-wall-nucleation device in planar configuration Kimura T, Wakaya F, Gamo K Journal of Vacuum Science & Technology B, 20(6), 2814, 2002 |
| 7 |
Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system Goto T, Hada T, Yanagisawa J, Wakaya F, Yuba Y, Gamo K Applied Surface Science, 159, 277, 2000 |
| 8 |
Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth Hada T, Goto T, Yanagisawa J, Wakaya F, Yuba Y, Gamo K Journal of Vacuum Science & Technology B, 18(6), 3158, 2000 |
| 9 |
Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system Yanagisawa J, Goto T, Hada T, Nakai M, Wakaya F, Yuba Y, Gamo K Journal of Vacuum Science & Technology B, 17(6), 3072, 1999 |
| 10 |
Interface states induced in GaAs by growth interruption during an in situ process Wakaya F, Matsubara T, Nakayama M, Yanagisawa J, Yuba Y, Takaoka S, Murase K, Gamo K Journal of Vacuum Science & Technology B, 16(4), 2313, 1998 |