검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors Latrach S, Frayssinet E, Defrance N, Chenot S, Cordier Y, Gaquiere C, Maaref H Current Applied Physics, 17(12), 1601, 2017 |
| 2 |
Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique Berthet F, Petitdidier S, Guhel Y, Trolet JL, Mary P, Vivier A, Gaquiere C, Boudart B Solid-State Electronics, 127, 13, 2017 |
| 3 |
Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications Alim MA, Rezazadeh AA, Gaquiere C Solid-State Electronics, 119, 11, 2016 |
| 4 |
Multibias and thermal behavior of microwave GaN and GaAs based HEMTs Alim MA, Rezazadeh AA, Gaquiere C Solid-State Electronics, 126, 67, 2016 |
| 5 |
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors Westlund A, Sangare P, Ducournau G, Iniguez-de-la-Torre I, Nilsson PA, Gaquiere C, Desplanque L, Wallart X, Millithaler JF, Gonzalez T, Mateos J, Grahn J Solid-State Electronics, 104, 79, 2015 |
| 6 |
Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors Mosbahi H, Gassoumi M, Saidi I, Mejri H, Gaquiere C, Zaidi MA, Maaref H Current Applied Physics, 13(7), 1359, 2013 |
| 7 |
Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs Berthet F, Guhel Y, Gualous H, Boudart B, Trolet JL, Piccione M, Sbrugnera V, Grimbert B, Gaquiere C Solid-State Electronics, 72, 15, 2012 |
| 8 |
Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs Lancry O, Pichonat E, Rehault J, Moreau M, Aubry R, Gaquiere C Solid-State Electronics, 54(11), 1434, 2010 |
| 9 |
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application Poisson MADF, Magis M, Tordjman M, Di Persio J, Langer R, Toth L, Pecz B, Guziewicz M, Thorpe J, Aubry R, Morvan E, Sarazin N, Gaquiere C, Meneghesso G, Hoel V, Jacquet JC, Delage S Journal of Crystal Growth, 310(23), 5232, 2008 |
| 10 |
Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges Kuzmik J, Bychikhin S, Lossy R, Wuerfl HJ, Poisson MAD, Teyssier JP, Gaquiere C, Pogany D Solid-State Electronics, 51(6), 969, 2007 |