검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Polarity governs atomic interaction through two-dimensional materials Kong W, Li HS, Qiao K, Kim Y, Lee K, Nie YF, Lee D, Osadchy T, Molnar RJ, Gaskill DK, Myers-Ward RL, Daniels KM, Zhang YW, Sundram S, Yu Y, Bae SH, Rajan S, Shao-Horn Y, Cho K, Ougazzaden A, Grossman JC, Kim J Nature Materials, 17(11), 999, 2018 |
| 2 |
Epitaxial graphene quantum dots for high-performance terahertz bolometers El Fatimy A, Myers-Ward RL, Boyd AK, Daniels KM, Gaskill DK, Barbara P Nature Nanotechnology, 11(4), 335, 2016 |
| 3 |
Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene Cai X, Sushkov AB, Suess RJ, Jadidi MM, Jenkins GS, Nyakiti LO, Myers-Ward RL, Li S, Yan J, Gaskill DK, Murphy TE, Drew HD, Fuhrer MS Nature Nanotechnology, 9(10), 814, 2014 |
| 4 |
Terahertz ellipsometry and terahertz optical-Hall effect Hofmann T, Herzinger CM, Tedesco JL, Gaskill DK, Woollam JA, Schubert M Thin Solid Films, 519(9), 2593, 2011 |
| 5 |
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H-2 and C3H8 VanMil BL, Lew KK, Myers-Ward RL, Holm RT, Gaskill DK, Eddy CR, Wang L, Zhao P Journal of Crystal Growth, 311(2), 238, 2009 |
| 6 |
Basal plane dislocation reduction for 8 degrees off-cut, 4H-SiC using in situ variable temperature growth interruptions VanMil BL, Stahlbush RE, Myers-Ward RL, Lew KK, Eddy CR, Gaskill DK Journal of Vacuum Science & Technology B, 26(4), 1504, 2008 |
| 7 |
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates Mastro MA, Eddy CR, Gaskill DK, Bassim ND, Casey J, Rosenberg A, Holm RT, Henry RL, Twigg ME Journal of Crystal Growth, 287(2), 610, 2006 |
| 8 |
Metal-organic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates Mastro MA, Holm RT, Bassim ND, Gaskill DK, Culbertson JC, Fatemi M, Eddy CR, Henry RL, Twigg ME Journal of Vacuum Science & Technology A, 24(4), 1631, 2006 |