| 1 |
Solution-processed organic field-effect transistors with cross-linked poly(4-vinylphenol)/polyvinyl alcohol bilayer dielectrics
Zhang HY, Zhang F, Sun J, Zhang M, Hu YF, Lou ZD, Hou YB, Teng F
Applied Surface Science, 478, 699, 2019 |
| 2 |
고성능 유기전계효과 트랜지스터 구현을 위한 시아노기가 도입된 투명 폴리이미드 절연층 개발
백용화, Li X, Chaudhary P, 박찬언, 한승수, 안태규, 김세현
Polymer(Korea), 43(1), 38, 2019 |
| 3 |
Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD
Khosa RY, Chen JT, Palsson K, Karhu R, Hassan J, Rorsman N, Sveinbjornsson EO
Solid-State Electronics, 153, 52, 2019 |
| 4 |
Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization
Lin YS, Cheng PH, Huang KW, Lin HC, Chen MJ
Applied Surface Science, 443, 421, 2018 |
| 5 |
Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors
Kim J, Choi S, Jo JW, Park SK, Kim YH
Thin Solid Films, 660, 814, 2018 |
| 6 |
Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor
Gao J, He G, Xiao DQ, Jiang SS, Lv JG, Cheng C, Sun ZQ
Materials Research Bulletin, 91, 166, 2017 |
| 7 |
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
Samnakay R, Balandin AA, Srinivasan P
Solid-State Electronics, 135, 37, 2017 |
| 8 |
Thin SiO2/a-Si:H/SiO2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories
Mateos D, Diniz JA, Nedev N, Munoz SNM, Curiel M, Mederos M, Valdez B, Montero G
Thin Solid Films, 628, 96, 2017 |
| 9 |
Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
Huang JJ, Tsai YJ, Tsai MC, Huang LT, Lee MH, Chen MJ
Applied Surface Science, 324, 662, 2015 |
| 10 |
Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
Huang JJ, Tsai YJ, Tsai MC, Lee MH, Chen MJ
Applied Surface Science, 330, 221, 2015 |
