화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy
Chen YL, Lo IA, Gau MH, Hsieh CH, Sham MW, Pang WY, Hsu YC, Tsai JK, Schuber R, Schaadt D
Thin Solid Films, 520(19), 6134, 2012
2 Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon
Metaferia W, Junesand C, Gau MH, Lo I, Pozina G, Hultman L, Lourdudoss S
Journal of Crystal Growth, 332(1), 27, 2011