화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology
Diokh T, Le-Roux E, Jeannot S, Cagli C, Jousseaume V, Nodin JF, Gros-Jean M, Gaumer C, Mellier M, Cluzel J, Carabasse C, Candelier P, De Salvo B
Thin Solid Films, 533, 24, 2013
2 Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks
Martinez E, Gaumer C, Lhostis S, Licitra C, Silly M, Sirotti F, Renault O
Applied Surface Science, 258(6), 2107, 2012
3 Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications
Salaun A, Grampeix H, Buckley J, Mannequin C, Vallee C, Gonon P, Jeannot S, Gaumer C, Gros-Jean M, Jousseaume V
Thin Solid Films, 525, 20, 2012
4 Chemical and Structural Properties of a TaN/HfO2 Gate Stack Processed Using Atomic Vapor Deposition
Gaumer C, Martinez E, Lhostis S, Wiemer C, Perego M, Loup V, Lafond D, Fabbri JM
Journal of the Electrochemical Society, 156(7), G78, 2009
5 Electrical and Chemical Properties of the HfO2/SiO2/Si Stack: Impact of HfO2 Thickness and Thermal Budget
Martinez E, Leroux C, Benedetto N, Gaumer C, Charbonnier M, Licitra C, Guedj C, Fillot F, Lhostis S
Journal of the Electrochemical Society, 156(8), G120, 2009