검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Scalable CGeSbTe-based phase change memory devices employing U-Shaped cells Park JH, Kim JH, Ko DH, Wu Z, Ahn DH, Park SO, Hwang KH Thin Solid Films, 634, 141, 2017 |
| 2 |
Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices Park JH, Kim JH, Ko DH, Wu Z, Ahn DH, Park SO, Hwang KH Thin Solid Films, 616, 502, 2016 |
| 3 |
Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films Huang YJ, Tsai MC, Wang CH, Hsieh TE Thin Solid Films, 520(9), 3692, 2012 |
| 4 |
Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film Lee PH, Chang PC, Chao DS, Liang JH, Chang SC, Tsai MJ, Chin TS Thin Solid Films, 520(21), 6636, 2012 |
| 5 |
Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O-2 plasma for non-volatile phase-change memory device Xu C, Liu B, Song ZT, Feng SL, Chen BM Thin Solid Films, 516(21), 7871, 2008 |