| 1 |
Microstructure and charge trapping in ZrO2- and Si3N4-based superlattice layer systems with Ge nanoparticles
Seidel S, Rebohle L, Prucnal S, Lehninger D, Hubner R, Klemm V, Skorupa W, Heitmann J
Thin Solid Films, 645, 124, 2018 |
| 2 |
Growth temperature dependent strain in relaxed Ge microcrystals
Meduna M, Falub CV, Isa F, von Kanel H
Thin Solid Films, 664, 115, 2018 |
| 3 |
Correlation between crystallization temperature and Ge concentration in Ge-TiO2 nanocomposite thin films
Abe S
Thin Solid Films, 636, 183, 2017 |
| 4 |
Deep-level sensitization in Ge-SiO2 composite films observed by photocurrent spectroscopy
Wolf O, Balberg I, Millo O
Thin Solid Films, 574, 184, 2015 |
| 5 |
Lateral growth of Ge nanocrystals in a thin Ge-rich silicon nitride layer
Lee S, Huang SJ, Conibeer G, Green M
Journal of Crystal Growth, 383, 36, 2013 |
| 6 |
Photoluminescent electrospun polymeric nanofibers incorporating germanium nanocrystals
Ortac B, Kayaci F, Vural HA, Deniz AE, Uyar T
Reactive & Functional Polymers, 73(9), 1262, 2013 |
| 7 |
Embedding of reduced pressure-chemical vapor deposition grown Ge nanocrystals in a high quality SiO2 matrix for non-volatile memory applications
Masarotto L, Yckache K, Fanton A, Aussenac F, Fillot F
Thin Solid Films, 518(19), 5382, 2010 |
| 8 |
Effects of forming gas annealing on the memory characteristics of Ge nanocrystals embedded in LaAiO(3) high-k dielectrics for flash memory device application
Lu XB, Lee PF, Dai JY
Thin Solid Films, 513(1-2), 182, 2006 |
| 9 |
Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
Ng TH, Ho V, Teo LW, Tay MS, Koh BH, Chim WK, Choi WK, Du AY, Tung CH
Thin Solid Films, 462-63, 46, 2004 |
