검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory Feng LW, Chang CY, Chang TC, Tu CH, Wang PS, Lin CC, Chen MC, Huang HC, Gan DS, Ho NJ, Chen SC, Chen SC Thin Solid Films, 520(3), 1136, 2011 |
| 2 |
Pt interlayer effects on Ni germanosilicide formation and contact properties Xu YJ, Ru GP, Jiang YL, Qu XP, Li BZ Applied Surface Science, 256(1), 305, 2009 |
| 3 |
SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mu m MOSFET fabrication Shim J, Oh H, Choi H, Sakaguchi T, Kurino H, Koyanagi M Applied Surface Science, 224(1-4), 260, 2004 |
| 4 |
Solid phase reactions between Fe thin films and Si-Ge layers on Si Yu CH, Chueh YL, Lee SW, Cheng SL, Chen LJ, Chou LJ, Cheng LW Thin Solid Films, 461(1), 81, 2004 |
| 5 |
The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 degrees C Jin LJ, Pey KL, Choi WK, Fitzgerald EA, Antoniadis DA, Pitera AJ, Lee ML, Chi DZ, Tung CH Thin Solid Films, 462-63, 151, 2004 |
| 6 |
Initial growth of titanium germanosilicide on Ge/Si(111) Yanagawa T, Nagai H, Ishii K, Matsumoto S Applied Surface Science, 175, 90, 2001 |
| 7 |
Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy Luo JS, Lin WT, Chang CY, Shih PS, Pan FM Journal of Vacuum Science & Technology A, 18(1), 143, 2000 |