화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects
Jarndal A, Ghannouchi FM
Solid-State Electronics, 123, 19, 2016
2 Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects
Birafane A, Aflaki P, Kouki AB, Ghannouchi FM
Solid-State Electronics, 76, 77, 2012
3 Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
Jarndal A, Aflaki P, Degachi L, Birafane A, Kouki A, Negra R, Ghannouchi FM
Solid-State Electronics, 54(7), 696, 2010
4 An accurate and compact large signal model for III-VHBT devices
Issaoun A, Ghannouchi FM, Kouki AB
Solid-State Electronics, 49(12), 1909, 2005