검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted Surface Vishwanath V, Demenev E, Giubertoni D, Vanzetti L, Koh AL, Steinhauser G, Pepponi G, Bersani M, Meirer F, Foad MA Applied Surface Science, 355, 792, 2015 |
| 2 |
Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy Secchi M, Demenev E, Colaux JL, Giubertoni D, Dell'Anna R, Iacob E, Gwilliam M, Jeynes C, Bersani M Applied Surface Science, 356, 422, 2015 |
| 3 |
Deuterium depth profile quantification in a ASDEX Upgrade divertor tile using secondary ion mass spectrometry Ghezzi F, Caniello R, Giubertoni D, Bersani M, Hakola A, Mayer M, Rohde V, Anderle M Applied Surface Science, 315, 459, 2014 |
| 4 |
Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si Mohacsi I, Petrik P, Fried M, Lohner T, van den Berg JA, Reading MA, Giubertoni D, Barozzi M, Parisini A Thin Solid Films, 519(9), 2847, 2011 |
| 5 |
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment Giubertoni D, Pepponi G, Sahiner MA, Kelty SP, Gennaro S, Bersani M, Kah M, Kirkby KJ, Doherty R, Foad MA, Meirer F, Streli C, Woicik JC, Pianetta P Journal of Vacuum Science & Technology B, 28(1), C1B1, 2010 |
| 6 |
Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon Pepponi G, Giubertoni D, Bersani M, Meirer F, Ingerle D, Steinhauser G, Streli C, Hoenicke P, Beckhoff B Journal of Vacuum Science & Technology B, 28(1), C1C59, 2010 |
| 7 |
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques Giubertoni D, Iacob E, Hoenicke P, Beckhoff B, Pepponi G, Gennaro S, Bersani M Journal of Vacuum Science & Technology B, 28(1), C1C84, 2010 |
| 8 |
Non-melting annealing of silicon by CO2 laser Florakis A, Verrelli E, Giubertoni D, Tzortzis G, Tsoukalas D Thin Solid Films, 518(9), 2551, 2010 |
| 9 |
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation Posselt M, Schmidt B, Anwand W, Grotzschel R, Heera V, Mucklich A, Wundisch C, Skorupa W, Hortenbach H, Gennaro S, Bersani M, Giubertoni D, Moller A, Bracht H Journal of Vacuum Science & Technology B, 26(1), 430, 2008 |
| 10 |
Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants Giubertoni D, Bersani A, Barozzi M, Pederzoli S, Iacob E, van den Berg JA, Werner M Applied Surface Science, 252(19), 7214, 2006 |