검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Efficient iron doping of HVPE GaN Freitas JA, Culbertson JC, Glaser ER, Richter E, Weyers M, Oliveira AC, Garg VK Journal of Crystal Growth, 500, 111, 2018 |
| 2 |
Sb@Ni-12@Sb-20(-/+) and Sb@Pd-12@Sb-20(n) Cluster Anions, Where n =+1,-1,-3,-4: Multi-Oxidation-State Clusters of Interpenetrating Platonic Solids Wang Y, Moses-DeBusk M, Stevens L, Hu JK, Zavalij P, Bowen K, Dunlap BI, Glaser ER, Eichhorn B Journal of the American Chemical Society, 139(2), 619, 2017 |
| 3 |
Incorporation of pervasive impurities on HVPE GaN growth directions Freitas JA, Culbertson JC, Mahadik NA, Glaser ER, Sochacki T, Bockowski M, Lee SK, Shim KB Journal of Crystal Growth, 456, 101, 2016 |
| 4 |
Dense nanocrystalline yttrium iron garnet films formed at room temperature by aerosol deposition Johnson SD, Glaser ER, Cheng SF, Hite J Materials Research Bulletin, 76, 365, 2016 |
| 5 |
Optical and magnetic resonance studies of Be-doped GaN bulk crystals Glaser ER, Freitas JA, Storm DF, Teisseyre H, Bockowski M Journal of Crystal Growth, 403, 119, 2014 |
| 6 |
Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy Freitas JA, Mastro MA, Glaser ER, Garces NY, Lee SK, Chung JH, Oh DK, Shim KB Journal of Crystal Growth, 350(1), 27, 2012 |
| 7 |
Characterization of bulk GaN crystals grown from solution at near atmospheric pressure Garces NY, Feigelson BN, Freitas JA, Kim J, Myers-Ward R, Glaser ER Journal of Crystal Growth, 312(18), 2558, 2010 |
| 8 |
Growth and photoluminescence properties of vertically aligned SnO2 nanowires Mazeina L, Picard YN, Caldwell JD, Glaser ER, Prokes SM Journal of Crystal Growth, 311(11), 3158, 2009 |
| 9 |
Residual impurities in GaN substrates and epitaxial layers grown by various techniques Murthy M, Freitas JA, Kim J, Glaser ER, Storm D Journal of Crystal Growth, 305(2), 393, 2007 |
| 10 |
Optical characterization of In0.27Ga0.73Sb and ln(x)Al(1-x)As(y)Sb(1-y) pitaxial layers for development of 6.2-angstrom-based heterojunction bipolar transistors Glaser ER, Magno R, Shanabrook BV, Tischler JG Journal of Vacuum Science & Technology B, 24(3), 1604, 2006 |