화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Fabrication and electrical characterizations of SGOI tunnel FETs with gate length down to 50 nm
Le Royer C, Villalon A, Hutin L, Martinie S, Nguyen P, Barraud S, Glowacki F, Allain F, Bernier N, Cristoloveanu S, Vinet M
Solid-State Electronics, 115, 167, 2016
2 In-Situ Ellipsometric Control of Si1-xGex/Si Heterostructures Grown by Chemical Beam Epitaxy
Boucaud P, Glowacki F, Ferrieu F, Larre A, Perio A, Bensahel D
Thin Solid Films, 248(1), 1, 1994