검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Plasma implanted ultra shallow junction boron depth profiles: Effect of plasma chemistry and sheath conditions Walther S, Godet L, Buyuklimanli T, Weeman J Journal of Vacuum Science & Technology B, 24(1), 489, 2006 |
| 2 |
Plasma doping implant depth profile calculation based on ion energy distribution measurements Godet L, Fang Z, Radovanov S, Walther S, Arevalo E, Lallement F, Scheuer JT, Miller T, Lenoble D, Cartry G, Cardinaud C Journal of Vacuum Science & Technology B, 24(5), 2391, 2006 |