검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
On the defect pattern evolution in sapphire irradiated by swift ions in a broad fluence range Gordo PM, Liszkay L, Kajcsos Z, Havancsak K, Skuratov VA, Kogel G, Sperr P, Egger W, de Lima AP, Marques MFF Applied Surface Science, 255(1), 254, 2008 |
| 2 |
Sub-surface defects induced by low energy Ar(+) sputtering of silver Naia MD, Gordo PM, Teodoro OMND, de Lima AP, Moutinho AMC, Brusa RS Materials Science Forum, 514-516, 1608, 2006 |
| 3 |
Positron annihilation studies in amorphous silicon nitride Gordo PM, Naia MD, Gill CL, de Lima AP, Lavareda G, de Carvalho CN, Amaral A, Kajcsos Z Materials Science Forum, 445-6, 90, 2004 |
| 4 |
Comparison of vacancy creation by nuclear and electronic processes in silicon irradiated with swift Kr and Bi ions Gordo PM, Liszkay L, Havancsak K, Skuratov VA, Sperr P, Egger W, Gill CL, de Lima AP, Kajcsos Z Materials Science Forum, 445-6, 93, 2004 |
| 5 |
Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire Liszkay L, Gordo PM, Havancsak K, Skuratov VA, de Lima A, Kajcsos Z Materials Science Forum, 445-6, 138, 2004 |
| 6 |
Gas permeability and temperature-dependent free-volume studies in polyurethane membranes by positron lifetime and Doppler spectroscopies Marques MFF, Gordo PM, Gil CL, de Lima AP, Queiroz DP, de Pinho MN, Kajcsos Z, Duplatre G Materials Science Forum, 445-6, 289, 2004 |
| 7 |
Near-surface studies on low-energy ion irradiated Ni using a positron beam Naia MD, Gordo PM, de Lima AP, Moutinho AMC, Brusa RS Materials Science Forum, 455-456, 623, 2004 |
| 8 |
Influence of the a-Si : H structural defects studied by positron annihilation on the solar cells characteristics Amaral A, Lavareda G, de Carvalho CN, Brogueira P, Gordo PM, Subrahmanyam VS, Gil CL, Naia MD, de Lima AP Thin Solid Films, 403-404, 539, 2002 |
| 9 |
Positronium formation and annihilation in BHDC/water/benzene microemulsions Subrahmanyam VS, Marques MFF, Gordo PM, Gil CL, de Lima AP Materials Science Forum, 363-3, 395, 2001 |
| 10 |
Role of the RF power on the structure of defects in a-Si : H films produced by PECVD Gordo PM, Subrahmanyam VS, Naia MD, Gil CL, de Lima AP, Lavareda G, de Carvalho CN, Amaral A Materials Science Forum, 363-3, 454, 2001 |