| 1 |
Growth evolution of SiGe graded buffers during LPE cooling process
Wang J, Shen YJ, Quitoriano N
Journal of Crystal Growth, 502, 54, 2018 |
| 2 |
Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded InxGa1-xAs buffers on GaAs
Mols Y, Kunert B, Gaudin G, Langer R, Caymax M
Journal of Crystal Growth, 452, 244, 2016 |
| 3 |
High-quality metamorphic compositionally graded InGaAs buffers
Lee KE, Fitzgerald EA
Journal of Crystal Growth, 312(2), 250, 2010 |
| 4 |
Invalidity of graded buffers for InAs grown on GaAs (001) - A comparison between direct and graded-buffer growth
Jeong Y, Choi H, Suzuki T
Journal of Crystal Growth, 301, 235, 2007 |
| 5 |
Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress
Salviati G, Ferrari C, Lazzarini L, Nasi L, Drigo AV, Berti M, De Salvador D, Natali M, Mazzer M
Applied Surface Science, 188(1-2), 36, 2002 |
| 6 |
Growth study of surfactant-mediated relaxed SiGe graded layers for 1.55-mu m photodetector applications
Liu JL, Radetic T, Tang YS, Teng D, Jin G, Luo YH, Wan J, Gronsky R, Wang KL
Thin Solid Films, 380(1-2), 54, 2000 |
