검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
On the electron mobility enhancement in biaxially strained Si MOSFETs Driussi F, Esseni D, Selmi L, Hellstrom PE, Malm G, Hallstedt J, Ostling M, Grasby TJ, Leadley DR, Mescot X Solid-State Electronics, 52(4), 498, 2008 |
| 2 |
Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates Parsons J, Beer CS, Leadley DR, Capewell AD, Grasby TJ Thin Solid Films, 517(1), 17, 2008 |
| 3 |
Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs von Haartman M, Malm BG, Hellstrom PE, Ostling M, Grasby TJ, Whall TE, Parker EHC, Lyutovich K, Oehme M, Kasper E Solid-State Electronics, 51(5), 771, 2007 |
| 4 |
SiGe(C) epitaxial technologies - issues and prospectives Grasby TJ, Whall TE, Parker EHC Thin Solid Films, 412(1-2), 44, 2002 |