검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Routine growth of InP based device structures using process calibration with optical in-situ techniques Wolfram P, Steimetz E, Ebert W, Grote N, Zettler JT Journal of Crystal Growth, 272(1-4), 118, 2004 |
| 2 |
Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor Franke D, Sabelfeld N, Ebert W, Harde P, Wolfram P, Grote N Journal of Crystal Growth, 248, 421, 2003 |
| 3 |
Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H-2 and N-2 carrier gas Schroeter-Janssen H, Roehle H, Franke D, Bochnia R, Harde P, Grote N Journal of Crystal Growth, 221, 70, 2000 |
| 4 |
MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride Wolfram P, Ebert W, Kreissl J, Grote N Journal of Crystal Growth, 221, 177, 2000 |