검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Controlling indium incorporation in InGaN barriers with dilute hydrogen flows Koleske DD, Wierer JJ, Fischer AJ, Lee SR Journal of Crystal Growth, 390, 38, 2014 |
| 2 |
Connection between GaN and InGaN growth mechanisms and surface morphology Koleske DD, Lee SR, Crawford MH, Cross KC, Coltrin ME, Kempisty JM Journal of Crystal Growth, 391, 85, 2014 |
| 3 |
Mechanism and control of current transport in GaN and AlGaN Schottky barriers for chemical sensor applications Hasegawa H, Akazawa M Applied Surface Science, 254(12), 3653, 2008 |
| 4 |
Microstructure in nonpolar m-plane GaN and AlGaN films Nagai T, Kawashima T, Imura M, Iwaya M, Kamiyama S, Amano H, Akasaki I Journal of Crystal Growth, 298, 288, 2007 |
| 5 |
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy Cordier Y, Baron N, Semond F, Massies J, Binetti M, Henninger B, Besendahl M, Zettler T Journal of Crystal Growth, 301, 71, 2007 |
| 6 |
In situ monitoring of the stress evolution in growing group-III-nitride layers Krost A, Dadgar A, Schulze F, Blasing J, Strassburger G, Clos R, Diez A, Veit P, Hempel T, Christen J Journal of Crystal Growth, 275(1-2), 209, 2005 |
| 7 |
Using optical reflectance to measure GaN nucleation layer decomposition kinetics Koleske DD, Coltrin ME, Russell MJ Journal of Crystal Growth, 279(1-2), 37, 2005 |
| 8 |
Heteroepitaxy of GaN on silicon: In situ measurements Krost A, Dadgar A, Schulze F, Clos R, Haberland K, Zettler T Materials Science Forum, 483, 1051, 2005 |
| 9 |
Optical properties and electronic structure of InN and In-rich group III-nitride alloys Walukiewicz W, Li SX, Wu J, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ Journal of Crystal Growth, 269(1), 119, 2004 |
| 10 |
Intraband transitions in GaN/AlN quantum wells grown on sapphire (0001) and 6H-SiC substrates Helman A, Tchernycheva M, Moumanis K, Lusson A Materials Science Forum, 457-460, 1589, 2004 |