1 |
Effect of growth interruption on the crystalline quality and electrical properties of Ga-doped ZnO thin film deposited on quartz substrate by magnetron sputtering Lee GH Thin Solid Films, 534, 282, 2013 |
2 |
Optical properties of InGaN/GaN multiple quantum wells with trimethylindium treatment during growth interruption Feng SW, Tsai CY, Wang HC, Lin HC, Chyi JI Journal of Crystal Growth, 325(1), 41, 2011 |
3 |
The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells Feng SW, Lin HC, Chyi JI, Tsai CY, Huang CJ, Wang HC, Yang FW, Lin YS Thin Solid Films, 519(18), 6092, 2011 |
4 |
A theoretical model for the MBE growth of AlGaAsN using ammonia as the N source Lu W, Campion RP, Foxon CT, Larkins EC Journal of Crystal Growth, 312(7), 1029, 2010 |
5 |
Competitive growth mechanisms of InAs quantum dots on InxGa1 (-) As-x layer during post growth interruption Yang C, Kim J, Sim U, Lee J, Choi WJ, Yoon E Thin Solid Films, 518(22), 6361, 2010 |
6 |
Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x > 0.5) multiple quantum wells Li DB, Aoki M, Katsuno T, Miyake H, Hiramatsu K, Shibata T Journal of Crystal Growth, 298, 500, 2007 |
7 |
Effects of growth pause on the structural and optical properties of InGaAsN-InGaAsP quantum well Yeh JY, Tansu N, Mawst LJ Journal of Crystal Growth, 265(1-2), 1, 2004 |
8 |
Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy Luo XD, Xu ZY, Wang YQ, Wang WX, Wang JN, Ge WK Journal of Crystal Growth, 247(1-2), 99, 2003 |
9 |
Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system Goto T, Hada T, Yanagisawa J, Wakaya F, Yuba Y, Gamo K Applied Surface Science, 159, 277, 2000 |
10 |
Nucleation and growth of self-assembled Ge/Si (001) quantum dots in single and stacked layers Le Thanh V, Yam V, Zheng Y, Bouchier D Thin Solid Films, 380(1-2), 2, 2000 |