검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET) Dupre C, Ernst T, Bernard E, Guillaumot B, Vulliet N, Coronel P, Skotnicki T, Cristoloveanu S, Ghibaudo G, Faynot O, Deleonibus S Solid-State Electronics, 53(7), 746, 2009 |
| 2 |
Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI Bernard E, Ernst T, Guillaumot B, Vulliet N, Garros X, Maffini-Alvaro V, Coronel P, Skotnicki T, Deleonibus S Solid-State Electronics, 52(9), 1297, 2008 |
| 3 |
Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs Rochette F, Casse M, Mouis M, Reimbold G, Blachier D, Leroux C, Guillaumot B, Boulanger F Solid-State Electronics, 51(11-12), 1458, 2007 |
| 4 |
SOI MOSFETs with buried alumina: Thermal and electrical aspects Oshima K, Cristoloveanu S, Guillaumot B, Deleonibus S, Iwai H Journal of the Electrochemical Society, 151(4), G257, 2004 |
| 5 |
Advanced SOI MOSFETs with buried alumina and ground plane: self-heating and short-channel effects Oshima K, Cristoloveanu S, Guillaumot B, Iwai H, Deleonibus S Solid-State Electronics, 48(6), 907, 2004 |
| 6 |
Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric Lime F, Oshima K, Casse M, Ghibaudo G, Cristoloveanu S, Guillaumot B, Iwai H Solid-State Electronics, 47(10), 1617, 2003 |
| 7 |
Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures De Salvo B, Ghibaudo G, Luthereau P, Baron T, Guillaumot B, Reimbold G Solid-State Electronics, 45(8), 1513, 2001 |
| 8 |
A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current De Salvo B, Ghibaudo G, Pananakakis G, Guillaumot B, Reimbold G Solid-State Electronics, 44(6), 895, 2000 |