| 1 |
Etching of n-type silicon in (HF plus oxidant) solutions: in situ characterisation of surface chemistry
Safi M, Chazalviel JN, Cherkaoui M, Belaidi A, Gorochov O
Electrochimica Acta, 47(16), 2573, 2002 |
| 2 |
Influence of dissolved oxygen on intensity modulated photocurrent spectroscopy (IMPS) at a silicon-hydrofluoric acid interface
Ogata YH, Ikeda T, Sakka T, Kobayashi T
Electrochimica Acta, 45(14), 2219, 2000 |
| 3 |
Electrochemical metal deposition on atomically nearly-flat silicon surfaces accompanied by nano-hole formation
Morisawa K, Ishida M, Yae S, Nakato Y
Electrochimica Acta, 44(21-22), 3725, 1999 |
| 4 |
Nucleation of trace copper on the H-Si(111) surface in aqueous fluoride solutions
Homma T, Wade CP, Chidsey CED
Journal of Physical Chemistry B, 102(41), 7919, 1998 |
| 5 |
A comparative electrchemical study of copper deposition onto silicon from dilute and buffered hydrofluoric acids
Li G, Kneer EA, Vermeire B, Parks HG, Raghavan S, Jeon JS
Journal of the Electrochemical Society, 145(1), 241, 1998 |
| 6 |
Electrochemical impedance spectroscopy of copper deposition on silicon from dilute hydrofluoric acid solutions
Cheng X, Li G, Kneer EA, Vermeire B, Parks HG, Raghavan S, Jeon JS
Journal of the Electrochemical Society, 145(1), 352, 1998 |
| 7 |
An optical method for monitoring metal contamination during aqueous processing of silicon wafers
Chopra D, Suni II
Journal of the Electrochemical Society, 145(5), 1688, 1998 |
| 8 |
In situ measurements of ultrathin silicon oxide dissolution rates
Chopra D, Suni II
Thin Solid Films, 323(1-2), 170, 1998 |
| 9 |
In-Situ Impedance Spectroscopy of Silicon Electrodes During the First Stages of Porous Silicon Formation
Popkirov GS, Ottow S
Journal of Electroanalytical Chemistry, 429(1-2), 47, 1997 |
| 10 |
The Low-Frequency Impedance of Anodically Dissolving Semiconductor and Metal-Electrodes - A Common Origin
Erne BH, Vanmaekelbergh D
Journal of the Electrochemical Society, 144(10), 3385, 1997 |
