검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Hole conduction characteristics of cubic Ti1-xAlxN Yoshikawa M, Toyama D, Fujita T, Nagatomo N, Makimoto T Thin Solid Films, 660, 711, 2018 |
| 2 |
Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes Min JH, Seo TH, Choi SB, Kim K, Lee JY, Park MD, Kim MJ, Suh EK, Kim JR, Lee DS Current Applied Physics, 16(10), 1382, 2016 |
| 3 |
Comparison of the electron work function, hole concentration and exciton diffusion length for P3HT and PT prepared by thermal or acid cleavage Tousek J, Touskova J, Ludvik J, Liska A, Remes Z, Kylian O, Kousal J, Chomutova R, Heckler IM, Bundgaard E, Krebs FC Solid-State Electronics, 116, 111, 2016 |
| 4 |
Electrochemical potentiostatic activation for improvement of internal quantum efficiency of 385-nm ultraviolet light-emitting diodes Choi HS, Kim HJ, Lee JJ, Seo HW, Tawfik WZ, Ha JS, Ryu SW, Jun SR, Jeong T, Lee JK Applied Surface Science, 283, 521, 2013 |
| 5 |
Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD Son JS, Baik KH, Seo YG, Song H, Kim JH, Hwang SM, Kim TG Journal of Crystal Growth, 326(1), 98, 2011 |
| 6 |
전착법에 의한 p-형 SbxTey 박막 형성 및 열전특성 평가 박미영, 임재홍, 임동찬, 이규환 Korean Journal of Materials Research, 21(4), 192, 2011 |
| 7 |
Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing Yang HG, Iyota M, Ikeura S, Wang D, Nakashima H Solid-State Electronics, 60(1), 128, 2011 |
| 8 |
Enhanced performance of p-GaN by Mg delta doping Wang HB, Liu JP, Niu NH, Shen GD, Zhang SM Journal of Crystal Growth, 304(1), 7, 2007 |
| 9 |
High hole concentration of p-type InGaN epitaxial layers grown by MOCVD Chen PC, Chen CH, Chang SJ, Su YK, Chang PC, Huang BR Thin Solid Films, 498(1-2), 113, 2006 |
| 10 |
Reduction in Al acceptor density by electron irradiation in Al-doped 4H-SiC Matsuura H, Aso K, Kagamihara S, Iwata H, Ishida T, Nishikawa K Materials Science Forum, 457-460, 751, 2004 |