검색결과 : 48건
| No. | Article |
|---|---|
| 1 |
Homoepitaxial growth of ZnO nanostructures from bulk ZnO Jang H, Zhao C, Kong X, Song J, Ding F, Cho S Journal of Colloid and Interface Science, 586, 135, 2021 |
| 2 |
Characterization of interfaces in mosaic CVD diamond crystal Muchnikov AB, Radishev DB, Vikharev AL, Gorbachev AM, Mitenkin AV, Drozdov MN, Drozdov YN, Yunin PA Journal of Crystal Growth, 442, 62, 2016 |
| 3 |
Near-surface structure of polar ZnO surfaces prepared by pulsed laser deposition Nakamura T, Yoshimura T, Ashida A, Fujimura N Thin Solid Films, 559, 88, 2014 |
| 4 |
The effect of deposition parameters on the morphology of micron diamond powders synthesized by HFCVD method Zhang T, Wang XC, Shen B, Sun FH, Zhang ZM Journal of Crystal Growth, 372, 49, 2013 |
| 5 |
AIN homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE Nomura T, Okumura K, Miyake H, Hiramatsu K, Eryu O, Yamada Y Journal of Crystal Growth, 350(1), 69, 2012 |
| 6 |
Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties Liu LZ, Chen YQ, Guo LL, Guo TB, Zhu YQ, Su Y, Jia C, Wei MQ, Cheng YF Applied Surface Science, 258(2), 923, 2011 |
| 7 |
In situ STM study of homoepitaxial electrodeposition on Au(100) Vaz-Dominguez C, Cuesta A Electrochimica Acta, 56(19), 6847, 2011 |
| 8 |
Growth process observation of homoepitaxial ZnO thin films using optical emission spectra during pulsed laser deposition Nakamura T, Masuko K, Ashida A, Yoshimura T, Fujimura N Thin Solid Films, 518(11), 2971, 2010 |
| 9 |
Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth Detchprohm T, Xia Y, Xi Y, Zhu M, Zhao W, Li Y, Schubert EF, Liu L, Tsvetkov D, Hanser D, Wetzel C Journal of Crystal Growth, 298, 272, 2007 |
| 10 |
Growth and characterization of boron-doped (111) CVD homoepitaxial diamond films Ri SG, Kato H, Ogura M, Watanabe H, Makino T, Yamasaki S, Okushi H Journal of Crystal Growth, 299(2), 235, 2007 |