화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe
Hartmann JM, Benevent V, Veillerot M, Halimaoui A
Thin Solid Films, 557, 19, 2014
2 Low-temperature RPCVD of Si, SiGe alloy, and Si1-yCy films on Si substrates using trisilane (Silcore (R))
Gouye A, Kermarrec O, Halimaoui A, Campidelli Y, Rouchon D, Burdin M, Holliger P, Bensahel D
Journal of Crystal Growth, 311(13), 3522, 2009
3 Submicrometer Luminescent Porous Silicon Structures Using Lithographically Patterned Substrates
Nassiopoulos AG, Grigoropoulos S, Canham L, Halimaoui A, Berbezier I, Gogolides E, Papadimitriou D
Thin Solid Films, 255(1-2), 329, 1995