화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Effects of strain and growth direction on the hall factor in n-type semiconductors
Park I, Chun SK
Solid-State Electronics, 49(1), 31, 2005
2 Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
Huang D, Yun F, Reshchikov MA, Wang D, Morkoc H, Rode DL, Farina LA, Kurdak C, Tsen KT, Park SS, Lee KY
Solid-State Electronics, 45(5), 711, 2001
3 Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs
Tezuka T, Kurobe A, Sugiyama N, Takagi S
Thin Solid Films, 369(1-2), 338, 2000