화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
Storm DF, Hardy MT, Katzer DS, Nepal N, Downey BP, Meyer DJ, McConkie TO, Zhou L, Smith DJ
Journal of Crystal Growth, 456, 121, 2016
2 Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN
Storm DF, McConkie T, Katzer DS, Downey BP, Hardy MT, Meyer DJ, Smith DJ
Journal of Crystal Growth, 409, 14, 2015
3 Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates
Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ
Journal of Crystal Growth, 425, 119, 2015
4 Onset of plastic relaxation in semipolar (11(2)over-bar2) InxGa1-xN/GaN heterostructures
Koslow IL, Hardy MT, Hsu PS, Wu F, Romanov AE, Young EC, Nakamura S, DenBaars SP, Speck JS
Journal of Crystal Growth, 388, 48, 2014