검색결과 : 1건
No. | Article |
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1 |
Impact of strained GaAs spacer between InP emitter and GaAs1-ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1-ySby/InP DHBTs Hoshi T, Hashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M Journal of Crystal Growth, 395, 31, 2014 |