화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Analytical model for base transit time of a bipolar transistor with Gaussian-doped base
Hassan MMS, Rahman T, Khan MZR
Solid-State Electronics, 50(3), 327, 2006
2 Induced base transit time of an epitaxial n(+)pn(-)n(+) bipolar transistor in saturation
Hassan MMS, Rahim AHMA
Solid-State Electronics, 47(6), 943, 2003
3 Characteristics of an epitaxial Schottky barrier diode for all levels of injection
Hassan MMS
Solid-State Electronics, 44(6), 1111, 2000