검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Direct MOVPE growth of semipolar (1122) AlxGa1-xN across the alloy composition range Hatui N, Rahman AA, Maliakkal CB, Bhattacharya A Journal of Crystal Growth, 437, 1, 2016 |
| 2 |
Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates Maliakkal CB, Rahman AA, Hatui N, Chalke BA, Bapat RD, Bhattacharya A Journal of Crystal Growth, 439, 47, 2016 |
| 3 |
MOVPE growth of semipolar (11(2)over-bar2) Al1-xInxN across the alloy composition range (0 <= x <= 0.55) Hatui N, Frentrup M, Rahman AA, Kadir A, Subramanian S, Kneissl M, Bhattacharya A Journal of Crystal Growth, 411, 106, 2015 |
| 4 |
MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Gupta P, Rahman AA, Hatui N, Gokhale MR, Deshmukh MM, Bhattacharya A Journal of Crystal Growth, 372, 105, 2013 |
| 5 |
High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers Laskar MR, Ganguli T, Hatui N, Rahman AA, Gokhale MR, Bhattacharya A Journal of Crystal Growth, 315(1), 208, 2011 |
| 6 |
Influence of buffer layers on the microstructure of MOVPE grown a-plane InN Laskar MR, Ganguli T, Kadir A, Hatui N, Rahman AA, Shah AP, Gokhale MR, Bhattacharya A Journal of Crystal Growth, 315(1), 233, 2011 |
| 7 |
Optimization of a-plane (1 1 (2)over-bar 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1 (1)over-bar 0 2) sapphire Laskar MR, Kadir A, Rahman AA, Shah AP, Hatui N, Gokhale MR, Bhattacharya A Journal of Crystal Growth, 312(14), 2033, 2010 |