검색결과 : 7건
No. | Article |
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1 |
Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices Haugan HJ, Mahalingam K, Szmulowicz F, Brown GJ Journal of Crystal Growth, 436, 134, 2016 |
2 |
Control of anion incorporation in the molecular beam epitaxy of ternary antimonide superlattices for very long wavelength infrared detection Haugan HJ, Brown GJ, Elhamri S, Grazulis L Journal of Crystal Growth, 425, 25, 2015 |
3 |
Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors Haugan HJ, Elhamri S, Ullrich B, Szmulowicz F, Brown GJ, Mitchel WC Journal of Crystal Growth, 311(7), 1897, 2009 |
4 |
InAs/GaSb type-II superlattices for high performance mid-infrared detectors Haugan HJ, Brown GJ, Smulowicz F, Grazulis L, Mitchel WC, Elhamri S, Mitchell WD Journal of Crystal Growth, 278(1-4), 198, 2005 |
5 |
Exploring optimum growth for high quality InAS/GaSb type-II superlattices Haugan HJ, Grazulis L, Brown GJ, Mahalingam K, Tomich DH Journal of Crystal Growth, 261(4), 471, 2004 |
6 |
Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy Haugan HJ, Cain AM, Haas TW, Eyink KG, Eiting CJ, Tomich DH, Grazulis L, Busbee JD Journal of Vacuum Science & Technology A, 21(1), 110, 2003 |
7 |
Low temperature metalorganic chemical vapor deposition growth of InP using the new precursors pentamethylcyclopentadienylindium(I) and white phosphorus Haugan HJ, Yu W, Lee ST, Petrou A, McCombe BD, Brewer KS, Lees JF, Beachley OT Journal of Crystal Growth, 244(2), 157, 2002 |