검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Band offsets in ITO/Ga2O3 heterostructures Carey PH, Ren F, Hays DC, Gila BP, Pearton SJ, Jang S, Kuramata A Applied Surface Science, 422, 179, 2017 |
| 2 |
High selectivity Inductively Coupled Plasma etching of GaAs over InGaP Hays DC, Cho H, Lee JW, Devre MW, Reelfs BH, Johnson D, Sasserath JN, Meyer LC, Toussaint E, Ren F, Abernathy CR, Pearton SJ Applied Surface Science, 156(1-4), 76, 2000 |
| 3 |
Surface morphology and removal rates for dry- and wet-etched novel resonator materials Part I. La3Ga5.5Ta0.5O14 Hays DC, Leerungnawarat P, Pearton SJ, Archibald G, Smythe RC Applied Surface Science, 165(2-3), 127, 2000 |
| 4 |
Surface morphology and removal rates for dry- and wet-etched novel resonator materials - Part II. La3Ga5.5Nb0.5O14 Hays DC, Leerungnawarat P, Pearton SJ, Archibald G, Smythe RC Applied Surface Science, 165(2-3), 135, 2000 |
| 5 |
Inductively coupled plasma etching in ICl- and IBr-based chemistries. Part I: GaAs, GaSb, and AlGaAs Hahn YB, Hays DC, Cho H, Jung KB, Lambers ES, Abernathy CR, Pearton SJ, Hobson WS, Shul RJ Plasma Chemistry and Plasma Processing, 20(3), 405, 2000 |
| 6 |
Inductively coupled plasma etching in ICl- and IBr-based chemistries. Part II: InP, InSb, InGaP, and InGaAs Hahn YB, Hays DC, Cho H, Jung KB, Lambers ES, Abernathy CR, Pearton SJ, Hobson WS, Shul RJ Plasma Chemistry and Plasma Processing, 20(3), 417, 2000 |
| 7 |
Comparison of Cl-2/He, Cl-2/Ar, and Cl-2/Xe plasma chemistries for dry etching of NiFe and NiFeCo Jung KB, Cho H, Hahn YB, Hays DC, Lambers ES, Park YD, Feng T, Childress JR, Pearton SJ Journal of the Electrochemical Society, 146(4), 1465, 1999 |
| 8 |
Comparison of F-2-based gases for high-rate dry etching of Si Hays DC, Jung KB, Hahn YB, Lambers ES, Pearton SJ, Donahue J, Johnson D, Shul RJ Journal of the Electrochemical Society, 146(10), 3812, 1999 |
| 9 |
Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN Hahn YB, Hays DC, Donovan SM, Abernathy CR, Han J, Shul RJ, Cho H, Jung KB, Pearton SJ Journal of Vacuum Science & Technology A, 17(3), 768, 1999 |
| 10 |
Damage to III-V devices during electron cyclotron resonance chemical vapor deposition Lee JW, Mackenzie KD, Johnson D, Hahn YB, Hays DC, Abernathy CR, Ren F, Pearton SJ Journal of Vacuum Science & Technology A, 17(4), 2183, 1999 |