화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
Standaert TEFM, Hedlund C, Joseph EA, Oehrlein GS, Dalton TJ
Journal of Vacuum Science & Technology A, 22(1), 53, 2004
2 Oxidation and induced damage in oxygen plasma in situ wafer bonding
Pasquariello D, Hedlund C, Hjort K
Journal of the Electrochemical Society, 147(7), 2699, 2000
3 Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching
Jonsson LB, Westlinder J, Engelmark F, Hedlund C, Du J, Smith U, Blom HO
Journal of Vacuum Science & Technology B, 18(4), 1906, 2000
4 Compositional variations of sputter deposited Ti/W barrier layers on substrates with pronounced surface topography
Jonsson LB, Hedlund C, Katardjiev IV, Berg S
Thin Solid Films, 348(1-2), 227, 1999
5 Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas : Angular dependence of SiO2 and Si3N4 etching rates
Schaepkens M, Oehrlein GS, Hedlund C, Jonsson LB, Blom HO
Journal of Vacuum Science & Technology A, 16(6), 3281, 1998
6 Angular-Dependence of the Polysilicon Etch Rate During Dry-Etching in SF6 and Cl-2
Hedlund C, Jonsson LB, Katardjiev IV, Berg S, Blom HO
Journal of Vacuum Science & Technology A, 15(3), 686, 1997
7 Discharge Disruptions in a Helicon Plasma Source
Shamrai KP, Virko VF, Blom HO, Pavlenko VP, Taranov VB, Jonsson LB, Hedlund C, Berg S
Journal of Vacuum Science & Technology A, 15(6), 2864, 1997
8 Method for the Determination of the Angular-Dependence During Dry-Etching
Hedlund C, Strandman C, Katardjiev IV, Backlund Y, Berg S, Blom HO
Journal of Vacuum Science & Technology B, 14(5), 3239, 1996
9 Preferential Sputtering of Silicon from Metal Silicides at Elevated-Temperatures
Hedlund C, Carlsson P, Blom HO, Berg S, Katardjiev IV
Journal of Vacuum Science & Technology A, 12(4), 1542, 1994
10 Microloading Effect in Reactive Ion Etching
Hedlund C, Blom HO, Berg S
Journal of Vacuum Science & Technology A, 12(4), 1962, 1994