검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Midinfrared InAs/InGaSb "W" diode lasers with digitally grown tensile-strained AlGaAsSb barriers Li W, Heroux JB, Shao H, Wang WI, Vurgaftman I, Meyer JR Journal of Vacuum Science & Technology B, 23(3), 1136, 2005 |
| 2 |
Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates Pei CW, Heroux JB, Wang WI Journal of Vacuum Science & Technology B, 22(3), 1460, 2004 |
| 3 |
Epitaxial growth of InGaAsSb/AlGaAsSb heterostructures for mid-infrared lasers based on strain engineering Heroux JB, Pei CW, Wang WI Journal of Vacuum Science & Technology B, 22(4), 2240, 2004 |
| 4 |
Optical characterization of strained InGaAsN/GaAs multiple quantum wells Heroux JB, Yang X, Wang WI Journal of Vacuum Science & Technology B, 20(3), 1154, 2002 |
| 5 |
High quality GaAs grown on Si-on-insulator compliant substrates Pei CW, Heroux JB, Sweet J, Wang WI, Chen J, Chang MF Journal of Vacuum Science & Technology B, 20(3), 1196, 2002 |
| 6 |
GaN grown by molecular beam epitaxy with antimony as surfactant Pei CW, Turk B, Heroux JB, Wang WI Journal of Vacuum Science & Technology B, 19(4), 1426, 2001 |
| 7 |
High performance 1.3 mu m InGaAsN : Sb/GaAs quantum well lasers grown by molecular beam epitaxy Yang X, Heroux JB, Jurkovic MJ, Wang WI Journal of Vacuum Science & Technology B, 18(3), 1484, 2000 |
| 8 |
Photoluminescence of as-grown and thermally annealed InGaAsN GaAs quantum wells grown by molecular beam epitaxy Yang X, Heroux JB, Jurkovic MJ, Wang WI Journal of Vacuum Science & Technology B, 17(3), 1144, 1999 |