| 1 |
Comparison of In-Plane Stress Development in Sol-Gel- and Nanoparticle-Derived Mesoporous Metal Oxide Thin Films
Cop P, Hess K, Werner S, Meinusch R, Smarsly BM, Kozuka H
Langmuir, 35(50), 16427, 2019 |
| 2 |
Controlled Electrodeposition of Zinc Oxide on Conductive Meshes and Foams Enabling Its Use as Secondary Anode
Stumpp M, Damtew D, Stock D, Hess K, Schroder D, Schlettwein D
Journal of the Electrochemical Society, 165(10), D461, 2018 |
| 3 |
Biscyclization reactions in butadiyne- and ethyne-linked triazenes and diazenes: Concerted versus stepwise coarctate cyclizations
Shirtcliff LD, Hayes AG, Haley MM, Kohler F, Hess K, Herges R
Journal of the American Chemical Society, 128(30), 9711, 2006 |
| 4 |
A thorough study of hydrogen-related gate oxide degradation in deep submicron MOSFET's with deuterium treatment process
Lee JS, Lee YH, Hess K
Solid-State Electronics, 50(2), 149, 2006 |
| 5 |
Anisotropy of the induced current density (ACID), a general method to quantify and visualize electronic delocalization
Geuenich D, Hess K, Kohler F, Herges R
Chemical Reviews, 105(10), 3758, 2005 |
| 6 |
Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs
Stadele M, Fischer B, Tuttle BR, Hess K
Solid-State Electronics, 46(7), 1027, 2002 |
| 7 |
Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices
Cheng KG, Lee JJ, Chen Z, Shah SA, Hess K, Leburton JP, Lyding JW
Journal of Vacuum Science & Technology B, 19(4), 1119, 2001 |
| 8 |
Secondary ion mass spectroscopy characterization of the deuterium sintering process for enhanced-lifetime complementary metal-oxide-semiconductor transistors
Lee J, Aur S, Eklund R, Hess K, Lyding JW
Journal of Vacuum Science & Technology A, 16(3), 1762, 1998 |
