검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AIN nucleation layer on GaN surface hillock density Marini J, Leathersich J, Mahaboob I, Bulmer J, Newman N, Shahedipour-Sandvik F Journal of Crystal Growth, 442, 25, 2016 |
| 2 |
Effect of AlN buffer layers on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates Won D, Redwing JM Journal of Crystal Growth, 377, 51, 2013 |