검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
A high growth rate atomic layer deposition process for nickel oxide film preparation using a combination of nickel(II) diketonate-diamine and ozone Zhang YX, Du LY, Liu XF, Ding YQ Applied Surface Science, 481, 138, 2019 |
| 2 |
Growth of aluminum nitride on flat and patterned Si (111) by high temperature halide CVD Chubarov M, Mercier F, Lay S, Charlot F, Crisci A, Coindeau S, Encinas T, Ferro G, Reboud R, Boichot R Thin Solid Films, 623, 65, 2017 |
| 3 |
Transparent and conducting intrinsic ZnO thin films prepared at high growth-rate with c-axis orientation and pyramidal surface texture Mondal P, Das D Applied Surface Science, 286, 397, 2013 |
| 4 |
Development of high density plasma assisted sputtering source for high growth rate deposition process Kim DG, Lee S, Kim JK Current Applied Physics, 11(5), S169, 2011 |
| 5 |
Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer Sobajima Y, Nishino M, Fukumori T, Kurihara M, Higuchi T, Nakano S, Toyama T, Okamoto H Solar Energy Materials and Solar Cells, 93(6-7), 980, 2009 |
| 6 |
A simple tool for quality evaluation of the microcrystalline silicon prepared at high growth rate Kocka J, Mates T, Ledinsky M, Stuchlikova H, Stuchlik J, Fejfar A Thin Solid Films, 516(15), 4966, 2008 |
| 7 |
High growth rate (up to 20 mu m/h) SiC epitaxy in a horizontal hot-wall reactor Zhang J, Mazzola J, Hoff C, Koshka Y, Casady J Materials Science Forum, 483, 77, 2005 |
| 8 |
Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD) Iwata K, Sakemi T, Yamada A, Fons P, Awai K, Yamamoto T, Shirakata S, Matsubara K, Tampo H, Sakurai K, Ishizuka S, Niki S Thin Solid Films, 480, 199, 2005 |
| 9 |
Homoepitaxial growth of cubic silicon carbide by sublimation epitaxy Furusho T, Miyanagi T, Okui Y, Ohshima S, Nishino S Materials Science Forum, 389-3, 279, 2002 |
| 10 |
Growth at high rates and characterization of bulk 3C-SiC material Ferro G, Balloud C, Juillaguet S, Vicente P, Camassel J, Monteil Y Materials Science Forum, 433-4, 115, 2002 |