| 1 |
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation
Kikuchi Y, Hopf T, Mannaert G, Everaert JL, Kubicek S, Eyben P, Waite A, Borniquel JID, Variam N, Mocuta D, Horiguchi N
Solid-State Electronics, 152, 58, 2019 |
| 2 |
In situ high temperature X-ray characterization of yttrium implantation effect on pure iron oxidation at 700 degrees C
Caudron E, Buscail H, Cueff R, Haanappel VAC, Jacob YP, Riffard F, Stroosnijder MF
Materials Science Forum, 369-3, 817, 2001 |
| 3 |
The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature
Senzaki J, Fukuda K, Imai S, Tanaka Y, Kobayashi N, Tanoue H, Okushi H, Arai K
Applied Surface Science, 159, 544, 2000 |
| 4 |
Electrical characteristics and surface morphology for arsenic ion-implanted 4H-SiC at high temperature
Senzaki J, Fukuda K, Imai S, Tanaka Y, Kobayashi N, Tanoue H, Okushi H, Arai K
Materials Science Forum, 338-3, 865, 2000 |
