검색결과 : 9건
No. | Article |
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1 |
Electrical characterization of silicon-on-insulator structures with a nondamaging elastic-metal gate Hillard RJ, Howland WH, Tan LC, Ye W Journal of Vacuum Science & Technology B, 22(1), 450, 2004 |
2 |
Product wafer monitoring of ultrashallow channel implants with an elastic metal gate Hillard RJ, Howland WH, Mazur RG, Ye W, Variam NK Journal of Vacuum Science & Technology B, 20(1), 488, 2002 |
3 |
Effects of trapped charges on Hg-Schottky capacitance-voltage measurements of n-type epitaxial silicon wafers Wang Q, Liu D, Virgo JT, Yeh J, Hillard RJ Journal of Vacuum Science & Technology A, 18(4), 1308, 2000 |
4 |
Modeling of ultrashallow spreading resistance probe calibration curves Hillard RJ, Ramey SM, Ye CW Journal of Vacuum Science & Technology B, 18(1), 389, 2000 |
5 |
High-resolution damage depth profiles of unannealed sub-100 nm B+ implants in (100) silicon Hartford CL, Hillard RJ, Mazur RG, Foad MA Journal of Vacuum Science & Technology B, 16(1), 316, 1998 |
6 |
Evaluation of diamond-ground beveled surfaces with Hg gate capacitance-voltage and current-voltage Hillard RJ, Sherbondy JC, Hartford CL, Weinzierl SR, Maur RG Journal of Vacuum Science & Technology B, 16(1), 411, 1998 |
7 |
Profiling of Silicide Silicon Structures Using a Combination of the Spreading Resistance and Point-Contact Current-Voltage Methods Heddleson JM, Weinzierl SR, Hillard RJ, Raichoudhury P, Mazur RG Journal of Vacuum Science & Technology B, 12(1), 317, 1994 |
8 |
Detection of Anomalous Defect-Enhanced Diffusion Using Advanced Spreading Resistance Measurements and Analysis Weinzierl SR, Hillard RJ, Heddleson JM, Raichoudhury P, Mazur RG, Osburn CM Journal of Vacuum Science & Technology B, 12(1), 322, 1994 |
9 |
Accurate Profiling of Ultra-Shallow Implants with Mercury Gate Metal-Oxide-Semiconductor Capacitance-Voltage Ledudal R, Hillard RJ, Heddleson JM, Weinzierl SR, Raichoudhury P, Mazur RG Journal of Vacuum Science & Technology B, 12(1), 336, 1994 |