화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Electrical characterization of silicon-on-insulator structures with a nondamaging elastic-metal gate
Hillard RJ, Howland WH, Tan LC, Ye W
Journal of Vacuum Science & Technology B, 22(1), 450, 2004
2 Product wafer monitoring of ultrashallow channel implants with an elastic metal gate
Hillard RJ, Howland WH, Mazur RG, Ye W, Variam NK
Journal of Vacuum Science & Technology B, 20(1), 488, 2002
3 Effects of trapped charges on Hg-Schottky capacitance-voltage measurements of n-type epitaxial silicon wafers
Wang Q, Liu D, Virgo JT, Yeh J, Hillard RJ
Journal of Vacuum Science & Technology A, 18(4), 1308, 2000
4 Modeling of ultrashallow spreading resistance probe calibration curves
Hillard RJ, Ramey SM, Ye CW
Journal of Vacuum Science & Technology B, 18(1), 389, 2000
5 High-resolution damage depth profiles of unannealed sub-100 nm B+ implants in (100) silicon
Hartford CL, Hillard RJ, Mazur RG, Foad MA
Journal of Vacuum Science & Technology B, 16(1), 316, 1998
6 Evaluation of diamond-ground beveled surfaces with Hg gate capacitance-voltage and current-voltage
Hillard RJ, Sherbondy JC, Hartford CL, Weinzierl SR, Maur RG
Journal of Vacuum Science & Technology B, 16(1), 411, 1998
7 Profiling of Silicide Silicon Structures Using a Combination of the Spreading Resistance and Point-Contact Current-Voltage Methods
Heddleson JM, Weinzierl SR, Hillard RJ, Raichoudhury P, Mazur RG
Journal of Vacuum Science & Technology B, 12(1), 317, 1994
8 Detection of Anomalous Defect-Enhanced Diffusion Using Advanced Spreading Resistance Measurements and Analysis
Weinzierl SR, Hillard RJ, Heddleson JM, Raichoudhury P, Mazur RG, Osburn CM
Journal of Vacuum Science & Technology B, 12(1), 322, 1994
9 Accurate Profiling of Ultra-Shallow Implants with Mercury Gate Metal-Oxide-Semiconductor Capacitance-Voltage
Ledudal R, Hillard RJ, Heddleson JM, Weinzierl SR, Raichoudhury P, Mazur RG
Journal of Vacuum Science & Technology B, 12(1), 336, 1994